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Green Car Congress
Dec 7, 2016, 6:15 am220 ptsRenesas Electronics Corporation has successfully developed the world’s first split-gate metal-oxide nitride oxide silicon (SG-MONOS) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or…
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Leaf through planet Earths environmental headlines in one convenient place. Read, share and discover the latest on ecology, science and green living from the web's most popular sites.