Sandia team develops GaN diode that is significant step toward protecting grid from EMPs

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By mmillikinMar 21, 2022, 10:00 am391 pts
Scientists from Sandia National Laboratories have developed a new gallium-nitride (GaN) diode that can shunt excess electricity within a few billionths of a second while operating at a record-breaking 6,400 volts—a significant step towards protecting the nation’s electric grid from an electromagnetic pulse…

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