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Dec 16, 2021, 5:30 am230 pts
Green Car CongressIBM and Samsung Electronics jointly announced a breakthrough in semiconductor design utilizing a new vertical transistor architecture (VTFET) that demonstrates a path to scaling beyond nanosheet, and has the potential to reduce energy usage by 85% compared to a scaled fin field-effect transistor (finFET). VTFET…
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Leaf through planet Earths environmental headlines in one convenient place. Read, share and discover the latest on ecology, science and green living from the web's most popular sites.
